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氧化钒薄膜的高电阻温度系数(TCR)是制作高灵敏度非制冷红外探测器的一个极其重要的参量。探测器的响应率与TCR紧密相关。高TCR将提升红外探测器的探测性能。鉴于氧化钒薄膜TCR的重要性,综述了近几年国内外研究中制备高TCR氧化钒薄膜的新技术并分类归纳:包括离子束增强沉积(IBED)法,反应脉冲激光沉积技术等。由于氧化钒薄膜具有VO2、VO5等多种价态结构,不同的制备条件和方法所生成的氧化钒薄膜TCR大小也不同,因此,分析了相关技术方法的优缺点,并对高TCR进行了一定的理论解释。
The high temperature coefficient of resistance (TCR) of vanadium oxide films is an extremely important parameter for making highly sensitive uncooled infrared detectors. Detector response rate and TCR are closely related. High TCR will improve the detection performance of infrared detectors. In view of the importance of the TCR of vanadium oxide film, the new technologies for preparing high TCR vanadium oxide films in recent years are reviewed and classified into three categories: ion beam enhanced deposition (IBED) method and reaction pulse laser deposition technique. Since vanadium oxide films have VO2, VO5 and other valence structures, the TCR sizes of vanadium oxide films generated by different preparation conditions and methods are also different. Therefore, the advantages and disadvantages of the related art methods are analyzed, and the high TCR is determined Theoretical explanation.