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本文介绍了首次提出的一种物理模型.描述经过补偿注入的N阱的C—V曲线.该模型指出,具有Pn给表面的N阱C—V曲线的物理机理与常规C—V曲线完全不同.在高负压区,常数的电容值为栅电容和零偏压pn结电容之串联值;在高正压区,常数的最大电容值为栅电容,P型表面耗尽区电容和极度增大的pn结电容的串联值;在这二个电容值之间,存在一个极小电容值.在较高的补偿注入时,这极小值对应于表面耗尽层接触到pn结空间电荷区;在较低注入时,则对应于表面积累层的开始.不管何种情况,极小值均对应于PMOS的阈值电压且指出表面pn结的形成.应用此种模型,设计了兼有表面型及隐埋型沟道MOS器件优点的超大规模集成CMOS器件.
This paper presents the first proposed physical model that describes the C-V curve of a compensated implanted N-well that states that the physical mechanism of a N-well C-V curve with Pn to the surface is quite different from a conventional C-V curve In the high negative pressure region, the constant capacitance is the series capacitance of the gate capacitance and the zero-bias pn junction capacitance. In the high positive pressure region, the maximum capacitance of the constant is the gate capacitance. The P-type surface depletion region capacitance and extreme increase A large pn junction capacitance in series; there is a very small capacitance value between these two capacitance values. At higher compensation injections this minimum corresponds to the surface depletion layer touching the pn junction space charge area And at the beginning of the lower implants it corresponds to the beginning of the surface accretion layer. In either case, the minima correspond to the threshold voltage of the PMOS and indicate the formation of the surface pn junctions. Using this model, And buried channel MOS device advantages of large-scale integrated CMOS devices.