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采用标准0.18μm CMOS工艺,设计了一种应用于UHF RFID接收机的双模低噪声放大器,用以满足侦听模式和阅读模式对接收机的不同需求。该低噪声放大器通过一种开关可控双模偏置电路,使其在高增益与高线性度两种模式间进行自由切换;运用复制型偏置技术,抑制了PVT变化对电路的影响;采用共模反馈技术和交叉耦合电容技术,改善了电路的线性度和噪声性能。仿真结果表明,在PVT变化的情况下,高增益模式时,放大器的增益(S21)达到11dB,输入匹配(S11)为-16.1dB,噪声系数(NF)为2.75dB,P1dB为-11.2dBm;高线性度模式时,增益(S21)达到4.2dB,输入匹配(S11)为-16.9dB,噪声系数(NF)为3.52dB,P1dB为0.35dBm。
Using a standard 0.18μm CMOS process, a dual-mode, low-noise amplifier designed for UHF RFID receivers is designed to meet the different receiver requirements for both listening and reading modes. The low-noise amplifier can switch freely between two modes with high gain and high linearity through a switchable controllable dual-mode bias circuit. By using the replicating bias technique, the influence of the PVT variation on the circuit is suppressed. Common-mode feedback technology and cross-coupling capacitor technology to improve the linearity and noise performance of the circuit. The simulation results show that the gain (S21) of the amplifier reaches 11dB, the input matching (S11) is -16.1dB, the noise figure (NF) is 2.75dB and the P1dB is -11.2dBm under the condition of high gain. The gain (S21) is 4.2dB, the input match (S11) is -16.9dB, the noise figure (NF) is 3.52dB, and the P1dB is 0.35dBm in high linearity mode.