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采用热型原子层沉积(T-ALD)和等离子体增强型原子层沉积(PEALD)技术在蓝宝石衬底上制备ZnO,不采用任何掺杂手段,通过调节生长温度、氧等离子体作用时间等参数,制备了电阻率在6个数量级(10~(-3)~10~3Ω·cm)范围内变化的ZnO薄膜。采用去离子水作氧源的T-ALD制备的ZnO薄膜载流子浓度高达10~(19)/cm~3量级,载流子迁移率较高,薄膜电阻率较低,适用于透明导电薄膜;采用氧等离子体作为氧源PEALD制备的薄膜载流子浓度达到10~(17)/cm~3量级,适用于薄膜晶体管。还讨论了不同生长工艺条件对薄膜晶型和表面形貌的影响。
ZnO was prepared on sapphire substrate by thermal atomic layer deposition (T-ALD) and plasma-enhanced atomic layer deposition (PEALD) without any doping method. By adjusting the growth temperature, oxygen plasma activation time and other parameters , A ZnO thin film with a resistivity varying within 6 orders of magnitude (10 ~ (-3) ~ 10 ~ 3Ω · cm) was prepared. ZnO thin films prepared by T-ALD using deionized water as oxygen source have a high carrier concentration of 10-19 / cm3, higher carrier mobility and lower resistivity of the film, which is suitable for the transparent conductive Film; the film carrier prepared by using oxygen plasma as the oxygen source PEALD has a concentration of 10 17 / cm 3 and is suitable for a thin film transistor. The effects of different growth conditions on the crystal structure and surface morphology of the films were also discussed.