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用X射线光电子能谱仪(XPS)研究了经Fe~+辐照后Si-SiO_2表面和界面的结构、化学成分和化学状态的变化。实验结果表明,辐照后的样品在SiO_2表面产生了纯硅的微区结构,Si-SiO_2界面过渡层厚度增宽近一倍,并导致MOS电容的失效。分析了铁离子注入引起上述变化的物理机制。
X-ray photoelectron spectroscopy (XPS) was used to study the structure, chemical composition and chemical state of Si-SiO 2 surface and interface after Fe ~ + irradiation. The experimental results show that the irradiated samples produce a pure silicon micro-structure on the surface of SiO 2, and the thickness of Si-SiO 2 interfacial transition layer nearly doubled, leading to the failure of MOS capacitor. The physical mechanism by which iron ion implantation caused the above change was analyzed.