论文部分内容阅读
对具有侧向寄生晶体管的 NMOSFET的电离辐射效应进行二维数值模拟。通过在 Si O2内解泊松方程、电流连续性方程及总剂量引入的空穴陷阱的辅助方程 ,对 NMOSFET的电离辐射效应特性进行研究 ,得出辐射产生的泄漏电流 ,主要是由于鸟嘴区和场氧区侧向寄生晶体管阈值电压的漂移所引起的
Two-dimensional numerical simulation of ionizing radiation effects of NMOSFETs with lateral parasitic transistors. The ionization radiation characteristics of NMOSFET were studied by solving the Poisson’s equation, the current continuity equation and the total hole-trap auxiliary equation in Si O2, and the leakage current generated by radiation was obtained, mainly due to the fact that the beak area And field oxide lateral parasitic transistor threshold voltage caused by the drift