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本文利用改进的米勒模型模拟了金属-铁电-绝缘体-基底结构铁电场效应晶体管在电离辐射环境下的铁电薄膜极化、界面电荷密度和电荷迁移率,最终得出在不同辐射总剂量和辐射剂量率下,铁电场效应晶体管的电容和漏源电流曲线.计算结果表明,总剂量为10 Mrad时,对铁电场效应晶体管的漏源电流和电容影响甚微;总剂量为100 Mrad(1 rad=10-2Gy)时,对其有很明显的影响.当辐射的剂量率发生变化时,铁电场效应晶体管的电流和电容也会发生改变.模拟结果表明,铁电场效应晶体管有较强的抗辐射能力.
In this paper, the improved Miller model is used to simulate the ferroelectric thin film polarization, interfacial charge density and charge mobility of metal-ferroelectric-insulator-substrate ferroelectric field effect transistor under ionizing radiation. Finally, And the radiation dose rate, the capacitance and drain-source current curves of the ferroelectric field-effect transistor are calculated.The results show that the total drain current and capacitance of the ferroelectric field-effect transistor have little effect when the total dose is 10 Mrad.The total dose is 100 Mrad 1 rad = 10-2Gy), the current and capacitance of the ferroelectric field-effect transistor will also change when the radiation dose rate changes.The simulation results show that the ferroelectric field-effect transistor has a strong Radiation resistance.