从曝光光源看,光刻技术分光学(UV,DeepUV)、X 射线、电子束、离子束等类别。目前,下一代亚微米领域的图形形成技术的实用化研究工作正在全面展开。当前的主流仍然是光学光刻。为使光学光刻的分辨率提高到0.8μm,有希望达到0.5μn 以下的 X 射线、电子束、离子束等光刻技术亦应在纷繁的光刻 From the exposure light source, photolithography (UV, DeepUV), X-ray, electron beam, ion beam and other categories. At present, the research on the practical application of the graphics forming technology in the next generation of sub-micron areas is in full swing. The current mainstream is still optical lithography. In order to improve the resolution of optical lithography to 0.8μm, it is hopeful that X-rays below 0.5μn can be achieved, and lithography such as electron beam and ion beam should be performed under numerous photolithography