外延层是由喷炉蒸发膜组分元素及掺杂元素淀积的。在生长掺锡的砷化镓时,一个炉装锡,一个炉装满多晶砷化镓,一个装纯镓。所有的喷炉都用液氮包围起来,液氮上敷有一冷致开口,且设机械闸。因此分子束可以突然地开和闭。喷炉与衬底的温度用热偶测量。而分子束的组分用质量光谱仪分析,用一种离散高能电子衍射装置研究外延膜 Epitaxial layer is deposited by the furnace evaporation film component elements and doping elements. In the growth of tin-doped gallium arsenide, a tin furnace, a furnace filled with polycrystalline gallium arsenide, a pure gallium installed. All blast furnaces are surrounded by liquid nitrogen, deposited on the liquid nitrogen has a cold opening, and a mechanical brake. Therefore, the molecular beam can suddenly open and close. Furnace and substrate temperature measured with a thermocouple. The molecular beam components with mass spectrometer analysis, with a discrete high-energy electron diffraction device to study the epitaxial film