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日电公司(NEC)新近推出了世界上首只5 GHz NPN 硅锗晶体管。目前该系列产品又增加了两种新型号器件。这些低噪声、高相关增益器件适合用作无线局域网、无绳电话以及短程无线用途中的低噪声放大器器件,它们整合了 GaAs 的性能优势和 Si 的价格优势。上述两种型号器件的制作采用 NEC 新的硅锗 UHS2—HV 晶片工艺。用该工艺制作的器件可使用更宽范围和更高的电源电压,从而使得设计灵活性更大。NESG2021和NESG2031这两种器件装在一种小型扁平铅MO5管壳中,MO5管壳高度仅0.59 mm,长度和宽度仅为2.0 mm 和1.25 mm。该产品样品由 NEC 加里福尼亚东方研究所设计,2002年10月开始批量生产,NESG2021和 NESG2031的批量(100000只)价格分别仅为35和37(?)(萨尔瓦多货币科郎),与同样性能的 GaAs 器件相比,它们具有巨大的价格优势。
NEC recently introduced the world’s first 5 GHz NPN silicon germanium transistor. At present, the series has added two new models of devices. Suitable for wireless LANs, cordless phones, and low noise amplifier devices for short range wireless applications, these low noise, high correlation gain devices combine the performance benefits of GaAs with the price benefits of Si. The two types of devices produced using NEC’s new silicon germanium UHS2-HV wafer process. Devices made with this process can be used with a wider range and higher supply voltages, resulting in greater design flexibility. The two devices, the NESG2021 and NESG2031, are housed in a small, flattened lead MO5 package that measures only 0.59 mm in height and 2.0 mm in length and 1.25 mm in width. The sample was designed by the NEC California Institute of Oriental Studies and began mass production in October 2002. The quantities (100000 only) of the NESG2021 and NESG2031 are only 35 and 37 (?) Respectively (Colón, the currency of El Salvador) They have huge price advantages over GaAs devices.