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采用直流磁控溅射法在石英衬底上制备了氮化铝(AlN)薄膜。用 X 射线衍射仪分析了薄膜结构。利用椭圆偏振仪和紫外/可见/近红外分光光度计对 AlN 薄膜进行了相关光学性能的研究,获得到了薄膜的折射率随波长的色散关系曲线。在波长为 250～1 000 nm,薄膜的折射率为 1.87～2.20。结合透射光谱图,分析了 AlN 薄膜的光学性质。结果表明:利用磁控溅射方法可以获得(100)择优取向 AlN 薄膜;AlN 薄膜在 200～300 nm 远紫外光范围内具有强烈的吸收,在 300～1000 nm 波长范围内具有良好的透过率。透射光谱图计算得到的薄膜厚度(427 nm)与椭圆偏振拟合得到的薄膜厚度(425 nm)一致。
Aluminum nitride (AlN) thin films were deposited on quartz substrates by DC magnetron sputtering. The film structure was analyzed by X-ray diffractometer. The optical properties of AlN films were investigated by ellipsometer and UV / VIS / NIR spectrophotometer, and the dispersion curves of the refractive index of the films with wavelength were obtained. In the wavelength of 250 ~ 1 000 nm, the refractive index of the film is 1.87 ~ 2.20. Combined with the transmission spectrum, the optical properties of AlN films were analyzed. The results show that (100) preferred orientation AlN thin films can be obtained by magnetron sputtering; AlN thin films have strong absorption in the range of 200 ~ 300 nm far ultraviolet light and good transmittance in the wavelength range of 300 ~ 1000 nm . The calculated film thickness (427 nm) by transmission spectroscopy is consistent with the film thickness (425 nm) obtained by ellipsometry.