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采用常压固相烧结法,通过优化烧结工艺,制备出平整、组织均匀、致密的ZAO靶材.研究了掺杂含量、烧结温度对陶瓷靶材微观结构和性能的影响,并使用自制靶材,采用射频磁控溅射法镀膜.结果表明:Al2O3的掺杂没有破坏ZnO晶体结构,Al原子对Zn原子进行有效替位;晶粒尺寸随着掺杂量的增多而减小;靶材的电阻率随掺杂量的增加呈U型变化,在3wt%时取得最小值4.2×10-2Ω.cm;靶材致密度超过96%.使用该靶材生长的多晶ZAO薄膜具有(002)择优取向,结晶均匀,呈柱状生长,薄膜电阻率和可见光平均透射率可分别达到8×10-4Ω.cm～9×10-4Ω.cm和85%.图9,表1,参14.
The ZAO target was prepared by atmospheric pressure solid-state sintering method, and the sintering process was optimized to obtain a uniform, compact and uniform ZAO target. The effects of doping content and sintering temperature on the microstructure and properties of the ceramic target were investigated. , And the films were deposited by radio frequency magnetron sputtering.The results show that the doping of Al 2 O 3 does not destroy the crystal structure of ZnO and the Al atoms effectively substitute Zn atoms.The grain size decreases with the increase of doping amount. The resistivity changes U-shaped with the increase of doping amount, the minimum value of 4.2 × 10-2Ω.cm at 3wt% and the target density of over 96% .The polycrystalline ZAO thin films grown using this target have (002) Preferred orientation, uniform crystallization, columnar growth, the film resistivity and visible light average transmittance can reach 8 × 10-4Ω.cm ~ 9 × 10-4Ω.cm and 85% respectively.