Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by post-growth thermal annealing. Structural characterizati
Strain and stress were simulated using finite element method (FEM) for three Ⅲ-Ⅴ-on-Insulator (Ⅲ-VOI) structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/
The electronic structures, magnetic properties, half-metallicity, and mechanical properties of half-Heulser compounds CoCrZ (Z=S, Se, and Te) were investigated
Binary Cu-based chalcogenide thermoelectric materials have attracted a great deal of attention due to their outstanding physical properties and fascinating phas
The electronic structural, effective masses of carriers, and optical properties of pure and La-doped Cd2SnO4 are calculated by using the first-principles method