本文描述了适合于象SPICE那样的通用电路模拟程序的GaAs MESFET精确的非线性模型。为了提高通用性,SPICE之类的程序要求以尽可能少的参数描述的简单模型,但仍要满足一定的精度范围,基于这个原因,采取了完全实验的方法。漏电流的直流模型由七个参数确定,MES二极管方程和基本电容模型用另外六个参数来确定。模型已由SPICE程序完成,而且,得出的几个特性已表明了模型的精确性。 This article describes an accurate non-linear model of a GaAs MESFET that is suitable for general-purpose circuit simulations such as SPICE. For generality, programs such as SPICE require a simple model described with as few parameters as possible, but still have to meet a certain range of precision, and for this reason, a completely experimental approach has been taken. The DC model of the leakage current is determined by seven parameters, and the MES diode equation and the basic capacitance model are determined by the other six parameters. The model has been completed by the SPICE program, and several features have been derived that demonstrate the accuracy of the model.