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在基于单壁碳纳米管(SWCNT)的纳电子器件或系统制备过程中,SWCNT场效应晶体管(SWCNTFET)作为最基本的构成元件,如何进行其可控装配与制造成为了关键课题.为此,在利用十二烷基硫酸纳(SDS)辅助超声分散SWCNT及离心去除杂质的基础上,针对所设计制作的背栅式FET微电极芯片,采用介电泳驱动方法实现了SWCNT的可控均匀排布与装配.排布与装配实验表明,SWCNT在电极间隙处具有很好的均匀定向排布与装配效果,且沿电极宽度方向的排布密度与电泳持续时间、溶液浓度基本成正比.经过初步漂洗及干燥,再通过场效应特性改善处理,烧断金属性SWCNT并进一步去除残留的SDS,获得了良好的SWCNTFET场效应特性.
As the most basic component of SWCNTs-based nanoelectronic devices or systems, how SWCNTs are fabricated and manufactured becomes a key issue.To this end, Based on SDS-assisted ultrasonic dispersion of SWCNTs and the removal of impurities by centrifugation, a controllable and uniform arrangement of SWCNTs was achieved by the dielectrophoresis driving method for the back-gate FET microelectrode chips designed and manufactured And assembly.The arrangement and assembly experiments show that SWCNT has a very good uniform arrangement and assembly effect at the electrode gap, and the arrangement density along the electrode width direction is basically proportional to the electrophoresis duration and the solution concentration. After preliminary rinsing And drying, and then through the field-effect characteristics to improve treatment, blown metal SWCNTs and further removal of residual SDS, obtained good SWCNTFET field-effect characteristics.