论文部分内容阅读
利用TRIM95蒙特卡罗软件计算了质子在二氧化硅中的质量阻止本领和能量沉积,比较了质子在二氧化硅中的电离阻止本领与核阻止本领,分析了质子在材料的表面吸收剂量与灵敏区实际吸收剂量的关系.利用60Coγ射线、1MeV电子和2—9MeV质子对CC4007RH和CC4011器件进行辐照实验,比较60Coγ射线和带电粒子的电离辐射损伤情况.实验结果表明,60Coγ射线、1MeV电子和2—7MeV质子辐照损伤效应中,在0V栅压下可以相互等效;在5V栅压下,以60Coγ射线损伤最为严重,1MeV电子的辐射损伤与60Coγ射线差别不大,9MeV以下质子辐射损伤总是小于60Coγ射线,能量越低,损伤越小.
The mass of proton in silica was calculated using Monte Carlo software TRIM95 to prevent its ability and energy deposition. The proton proton blocking ability in silica was compared with that of nuclear deterrent. The proton absorbed dose and sensitivity on the surface of the material were analyzed. The relationship between the absorbed dose and the actual absorbed dose of CC4007RH and CC4011 was studied by using 60Coγ ray, 1MeV electron and 2-9MeV proton to compare the damage of ionizing radiation between 60Coγ ray and charged particle. The experimental results show that 60Coγ ray, 1MeV electron and In the 2-7 MeV proton irradiation damage effect, it can be equivalent to each other under the 0V grid voltage. Under the grid voltage of 5 V, the most serious damage is 60Co γ ray. The radiation damage of 1MeV electron beam is not significantly different from that of 60Co γ ray. Always less than 60Co gamma rays, the lower the energy, the less damage.