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提出了新的金属-氧化层-半导体-场效晶体管(MOSFET)器件的小信号等效电路结构,提取了等效电路结构的元件参数值,在器件建模型软件IC-CAP2008下,对等效电路模型和提取的元件参数进行编译,生成了能够应用于射频与微波领域的场效应晶体管的高频小信号器件模型,将生成的器件模型编译到高频仿真软件ADS中,并调用S参数仿真器对器件模型进行S参数仿真,最后对比了仿真结果与测试数据的差异性,对生成的器件模型做出了误差分析,展示了所建小信号模型的良好性能。
This paper proposes a small signal equivalent circuit structure of a new metal-oxide-semiconductor-field-effect transistor (MOSFET) device and extracts the component parameter values of the equivalent circuit structure. Under the device modeling software IC-CAP2008, Circuit model and extracted component parameters to generate a high-frequency small-signal device model that can be applied to a field-effect transistor in the field of radio frequency and microwave. The generated device model is compiled into a high-frequency simulation software ADS, and a S-parameter simulation The S-parameters of the device model are simulated. Finally, the differences between the simulation results and the test data are compared. The error of the generated device model is analyzed and the good performance of the built-in small signal model is demonstrated.