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一、引言1975年Spear等人对用辉光放电技术制备的非晶态硅氢合金(a—Si:H)材料实现了掺杂效应。这不仅是对非晶态硅技术的一次重要突破,同时也为非晶态半导体理论的进一步发展提供了富有价值的实验依据。关于a—Si:H材科的研究是近几年来在非晶态半导体方面的一个重要内容,围绕着氢对a—Si:H材料物理性质的影响、氢在其中的结构状态和电子状态等方面已经完成了和正在进行着大量的研究工作。
I. Introduction In 1975, Spear et al. Achieved the doping effect on the amorphous silicon-hydrogen alloy (a-Si: H) material prepared by the glow discharge technique. This is not only an important breakthrough in amorphous silicon technology, but also provides valuable experimental evidence for the further development of amorphous semiconductor theory. Research on a-Si: H materials has been an important part of amorphous semiconductors in recent years. It focuses on the influence of hydrogen on the physical properties of a-Si: H materials, the structural and electronic states of hydrogen A great deal of research work has been completed and is in progress.