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引言 在超高真空中,用铯激活Gap形成的负电子亲和势发射体Gap—Cs,这是一种优良的新型电子倍增材料。它的二次电子发射系数高,且二次电子的发射系数随一次电子能量的增加而增高。当一次电子能量为600V时,单晶Gap—Cs的二次电子发射系统δ=30～50,普通BeO、Mg—Ag合金等材料的二次电子发射系数δ通常只有3—6。若用Gap—Cs作光电倍增管的培增极,则这种管子便具有增益高,暗电流低噪声小;能提高响应速度和改进时间分弁率等特点。解决了微弱光的探测问题。可广泛用于闪烁计数、激光测距高能物理等科学领域。
Introduction In ultra-high vacuum, Gap-Cs, a negative electron affinity emitter formed by Gap activation, is an excellent new electron multiplying material. Its secondary electron emission coefficient is high, and the emission coefficient of secondary electrons increases with the increase of primary electron energy. When the primary electron energy is 600V, the secondary electron emission δ of single crystal Gap-Cs is 30 ~ 50, and the secondary electron emission coefficient δ of common BeO, Mg-Ag alloy and other materials is usually only 3-6. If Gap-Cs photomultiplier tubes for the cultivation of pole, then the tube will have a high gain, dark current low noise; can improve the response speed and improve the time sharing rate and so on. Solve the weak light detection problem. Can be widely used in scintillation counting, laser ranging high-energy physics and other scientific fields.