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为p型功率管的USB保护芯片设计了一款栅极驱动电路。针对VBUS电压过高,不能及时断开输入,导致芯片内部损坏的问题,使用一个npn管在栅极驱动电路内部实现了过压保护且有迟滞功能。在0.5μm BCD工艺下的仿真结果显示:该驱动电路在1.1 V的低压下就可以正常工作,而且在启动过程中输出电压平滑上升,无过冲;该驱动电路可以根据需求调节过压保护的门限和迟滞,使芯片更加安全可靠且该驱动电路结构简单。
For the p-type power transistor USB protection chip designed a gate drive circuit. For VBUS voltage is too high, can not disconnect the input in time, leading to the internal chip damage, the use of a npn tube in the gate drive circuit to achieve over-voltage protection and hysteresis function. The simulation results under the 0.5μm BCD process show that the driving circuit can work normally under the low voltage of 1.1V and the output voltage rises smoothly without overshoot during the starting process. The driving circuit can adjust the overvoltage protection The threshold and hysteresis make the chip more safe and reliable and the structure of the driving circuit is simple.