多年来,对于MIS结构的c—v特性进行了大量的研究但是对于高频c—v测试中串联电容的来源和性能并没有细致的分析。长期以来,对于如图1(a)和(b)所示MIS的c—v测试结构一直认为是正确的结构,其理由是硅衬底（背面）和金属测试 Over the years, extensive research has been conducted on the c-v characteristics of MIS structures, but there is no detailed analysis of the sources and performance of series capacitors in high-frequency c-v tests. For a long time, the c-v test structure for MIS as shown in FIGS. 1 (a) and (b) has been considered the correct structure for the reason that the silicon substrate (back side) and the metal test