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同步辐射X射线光刻自从被提出来以后,就日益引起了许多人的注意.它具有许多优点,比如高分辨率、大的工艺宽容度、高产量等,被普遍认为是一种很好的可应用于0.25μm以下的光刻技术.鉴于同步辐射X射线光刻技术在未来的光刻技术中所占的重要地位,我国光刻技术研究者于1990年在北京同步辐射装置(BSRF)3BIA束线上筹建了我国首座同步辐射X射线光刻站,并于1990年6月成功地进行了我国首次同步辐射X射线光刻实验.在同步辐射X射线光刻实验中,准确地选择曝光时间和曝光束流的乘积是很重要的(该乘积以下用XK来表示),因为它会直接影响到光刻胶的显影速率,从而影响到以下图形转换的质量.
Since its introduction, synchrotron radiation x-ray lithography has drawn increasing attention for many people and has many advantages such as high resolution, large process latitude, high yield, etc., which are generally considered to be good Which can be applied to the photolithography technology below 0.25μm.In view of the important position of synchrotron radiation X-ray lithography technology in the future lithography technology, our lithography researchers in Beijing Synchrotron Radiation Facility (BSRF) 3BIA China’s first synchrotron X-ray lithography station was built on the beamline, and the first synchrotron radiation X-ray lithography experiment in China was successfully carried out in June 1990. In the synchrotron radiation X-ray lithography experiment, the exposure time The product of the exposure beam and the exposure is important (the product is expressed as XK below) because it directly affects the photoresist development rate, which in turn affects the quality of the following graphics conversions.