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给出了电子与空穴电流密度方程和能流密度方程的一种新的离散方法，并成功地用于基于流体动力学模型和差分离散的半导体器件的数值模拟分析．
A new discrete method for electron and hole current density and energy flux density equations is given and successfully applied to the numerical simulation of semiconductor devices based on the fluid dynamics model and differential dispersion.