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为了研究具有各向异性材料缺陷层的光子晶体禁带特性,构造了具有各向异性材料缺陷层(AB)10F(BA)10型一维光子晶体,利用Berreman传输矩阵进行了数值计算。研究发现,随着缺陷层F厚度d的增加,在700~1 000 nm禁带中出现的两个缺陷模发生红移,缺陷模透射系数呈阶段性变化。改变缺陷层内单轴晶体方位角θ,X偏振光产生的缺陷模往长波方向移动,透射系数在一定波长范围内规律变化,而Y偏振光产生的缺陷模始终不变。另方位角φ在0~90°范围内变化,则该禁带内产生新的缺陷模。缺陷模的这些特征对全方位过滤器的设计有一定价值。
In order to study the band gap property of photonic crystals with anisotropic material defect layer, a 10D (BA) 10 type one-dimensional photonic crystal with anisotropic material defect layer (AB) was constructed and calculated using Berreman transfer matrix. It is found that with the increase of the thickness d of the defect layer F, the two defect modes appear red-shifted in the band gap of 700-1000 nm, and the transmission coefficient of the defect mode changes in a stepwise manner. By changing the azimuth θ of the uniaxial crystal in the defect layer, the defect mode caused by the X-polarized light moves in the direction of the long wavelength, and the transmission coefficient changes regularly in a certain wavelength range, while the defect mode generated by the Y-polarized light is always unchanged. In addition, the azimuth φ changes within the range of 0 ° to 90 °, then a new defect mode is generated in the forbidden band. These features of the defect mode have some value for the design of omni-directional filters.