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讨论了ＡｌＮ基片的薄膜金属化。通过试验，确定了有效的清洗方法及优化溅射参数。实验证明，ＴｉＷ－Ａｕ 是ＡｌＮ的优良金属化体系。ＡｌＮ材料经激光划片后出现导电物质， 经稀盐酸处理可去掉导电物质
The film metallization of AlN substrates is discussed. Through the experiment, we have determined the effective cleaning method and optimized the sputtering parameters. Experiments show that, TiW-Au AlN is an excellent metallization system. AlN material after laser scribing conductive material, diluted hydrochloric acid treatment can be removed conductive material