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硅单晶抛光片是极大规模集成电路应用最广泛的衬底材料,抛光液为影响硅单晶片抛光最关键的因素。通过改变抛光液中有机胺碱配比来调节抛光液的pH值。实验结果表明:随着有机胺碱比例的不断增加,pH值随之上升,硅片的去除速率(material removal rate,MRR)先增大后减小。pH值在10.5左右时去除速率达到最大值(1706nm/min)。此时用Agilent 5600LS型原子力显微镜测得硅片表面的粗糙度为0.369nm。并用马尔文Zetasizer 3000HSA纳米粒度分析仪测定不同有机胺碱浓度下的抛光液中水溶胶磨粒粒径变化。通过对实验后晶片表面进行检测并结合去除速率综合考虑,抛光液pH值宜选择为10.5左右。抛光速率在pH值为10.3～10.6比较稳定。
Silicon single crystal polishing pad is the most widely used substrate material for very large scale integrated circuits. Polishing liquid is the most critical factor affecting the silicon single wafer polishing. By changing the ratio of organic amine in the polishing solution to adjust the pH of the polishing solution. The experimental results show that with the increase of the ratio of organic amine to base, the value of pH increases and the material removal rate (MRR) firstly increases and then decreases. The removal rate reaches the maximum (1706nm / min) at a pH of about 10.5. At this point with the Agilent 5600LS atomic force microscope to measure the surface of the wafer roughness of 0.369nm. The particle size of the hydrosol abrasive grains in the polishing solution was measured with Malvern Zetasizer 3000 HSA Nanoparticle Size Analyzer. After testing the surface of the wafer after the test combined with the removal rate of the comprehensive consideration, the pH value of the slurry should be selected to be about 10.5. Polishing rate at pH 10.3 ~ 10.6 relatively stable.