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通过有限元分析设计了具有抑制边缘击穿的层叠边缘结结构的平面型InGaAs/InP盖革雪崩光电二极管.通过仔细地控制中央区域结的深度,光电二极管的击穿电压降至54.3V;同时通过调整InP倍增层的掺杂浓度和厚度,沿器件中轴的电场分布也得到了控制.在有源区的边缘采用层叠pn结结构有效地抑制了过早边缘击穿现象.仿真模拟显示四层层叠结构是边缘击穿抑制效果和制造工艺复杂度的一个好的折衷方案,该结构中峰值电场强度为5.2×105kV/cm,空穴离化积分最大值为1.201.本文提供了一种设计高性能的InGaAs/InP光子计数雪崩光电二极管的有效方法.
A planar InGaAs / InP cap the avalanche photodiode with a laminated edge junction structure that suppresses edge breakdown is designed by finite element analysis. The breakdown voltage of the photodiode drops to 54.3V by carefully controlling the depth of the central region junction; meanwhile, By adjusting the doping concentration and thickness of the InP doping layer, the electric field distribution along the axis of the device is also controlled.Player pn junction structure at the edge of the active region effectively suppresses the premature edge breakdown.The simulation shows that the four Layer stack structure is a good compromise between the edge breakdown suppression effect and the complexity of the fabrication process, where the peak electric field strength is 5.2 × 10 5 kV / cm and the maximum hole ionization integral is 1.201. This article presents a design High Performance InGaAs / InP Photon Counting Avalanche Photodiode Effective Method.