The isotopic bare ion 13C6+ was employed to collide with helium at 4.15-11.08keV/u. The relative partial cross sections were measured by position-sensitive and
The dipole-dipole interaction model is used to calculate the angular dependence of lateral and levitation forces on a small permanent magnet and a cylindrical s
Optoelectronic characteristics of individual indium-doped tin oxide (In-SnO2) nanowires are investigated by performing transport measurement with UV illuminatio
We have measured lifetimes of △n = 0 allowed transitions in beryllium-like sulfur using beam foil spectroscopic techniques. The measured values, derived from a
A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST
High-quality indium-tin-oxide (ITO) films are deposited on p-type Czochralski silicon and 7059 Coing glass by direct-current magnetron sputtering at various tem