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采用射频磁控溅射技术在不同条件、不同基片上制备氧化碲(TeOx)薄膜,并通过X线衍射、傅里叶变换红外光谱、X线光电子能谱等技术对制备的TeOx薄膜的结构和成分进行了分析。研制了TeOx/36°YX-LiTaO3结构的Love波器件,对Love波器件的延时温度系数(TCD)进行研究。结果表明,与36°YX-LiTaO3基片上制作的水平切变声波器件的延时温度系数相比,Love波器件的延时温度系数因TeOx薄膜的沉积而减小,故TeOx薄膜的延时温度系数为负值,其变化量取决于TeOx薄膜的制备条件和薄膜厚度。因此,TeOx/36°YX-LiTaO3结构Love波器件的延时温度系数可通过选择TeOx薄膜的制备条件和膜厚进行优化。
The TeOx thin films were prepared by RF magnetron sputtering on different substrates and substrates. The structure and properties of the prepared TeOx thin films were investigated by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy The ingredients were analyzed. The Love wave device with TeOx / 36 ° YX-LiTaO3 structure was developed and the delay temperature coefficient (TCD) of Love wave device was studied. The results show that the delay temperature coefficient of Love wave device decreases with the deposition of TeOx thin film compared with the delay temperature coefficient of horizontal shear acoustic wave device made on 36 ° YX-LiTaO3 substrate, so the delay temperature of TeOx thin film The coefficient is negative and varies depending on the preparation conditions and film thickness of the TeOx thin film. Therefore, the delay temperature coefficient of the TeOx / 36 ° YX-LiTaO3 structure Love wave device can be optimized by selecting the preparation conditions and the film thickness of the TeOx film.