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采用直流射频等离子增强化学汽相沉积技术制备ａＣ∶Ｈ（Ｎ）薄膜，用Ｘ射线光电子能谱研究了混合气体中Ｎ２含量对薄膜成分与结构的影响．ａＣ∶Ｈ（Ｎ）薄膜中含氮量可达９０９％．对ａＣ∶Ｈ（Ｎ）薄膜的Ｃ１ｓ和Ｎ１ｓ结合能谱的分析表明ａＣ∶Ｈ（Ｎ）薄膜的结构是由Ｃ３Ｎ４相镶嵌在ｓｐ２键结合的ＣＮｘ基体中组成．其中Ｃ３Ｎ４相中Ｎ和Ｃ原子比接近４∶３，不随薄膜中含Ｎ量改变，薄膜中Ｃ３Ｎ４相和ｓｐ３碳的含量随Ｎ含量的升高而增加．
A-C: H (N) thin films were prepared by DC-RF plasma enhanced chemical vapor deposition. The effect of N2 content in the mixed gas on the composition and structure of the thin films was investigated by X-ray photoelectron spectroscopy. a C: H (N) film nitrogen content up to 9 09%. The analysis of the binding energy spectra of C1s and N1s for a-C: H (N) thin films shows that the structure of a-C: H (N) thin films is composed of C3N4 phase inlayed by the sp2-bonded CNx matrix. Among them, the ratio of N to C in C3N4 phase is close to 4: 3, which does not change with the content of N in the film. The content of C3N4 and sp3 carbon in the film increases with the increase of N content.