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A bias-controlled spin-filter and spin memory is theoretically proposed,which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads.By applying different voltage pulses Vwrite across the junction,the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead,and the spin direction of SMM can be “read out” either by the magneto-resistance or by the spin current with another series of small voltage pulses Vprobe.It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner.This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.