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常规的实验用磁控溅射设备,其固定的靶基工况,导致膜层均匀性区域有限,只能用于较小基片上膜层的沉积。提出一种新的方法,将靶材固定,基片自转或公自转工位变更为靶材可移动,基片自转的方式,并控制靶材的移动及基片自转速率的调节,可以用较小的靶材在较大平面上沉积膜层,所制备膜层具有良好的膜厚均匀性;建立了计算模型,分析了小靶材实现大平面基片均匀性膜层沉积的途径;在Φ260 mm的平片上进行了Ge膜的实际制备,证实了上述思路的可行性。
Conventional experimental magnetron sputtering equipment, the fixed target base conditions, resulting in a limited area of uniformity of the film can only be used for smaller substrate deposition of the film. A new method is proposed to change the target fixed, the substrate rotation or the rotation position to the target can be moved, the rotation of the substrate, and control the movement of the target and the substrate rotation rate can be used to compare The small target is deposited on the larger plane, and the prepared film has good thickness uniformity. The calculation model is established to analyze the way of small target to realize the uniform film deposition of the large plane substrate. At Φ260 mm plain film on the actual preparation of Ge film, confirmed the feasibility of the above ideas.