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The valence band structure and hole effective mass of silicon under a uniaxial stress in(001) surface along the[110]direction were detailedly investigated in the framework of the k·p theory.The results demonstrated that the splitting energy between the top band and the second band for uniaxial compressive stress is bigger than that of the tensile one at the same stress magnitude,and of all common used crystallographic direction,such as[110], [001],[110]and[100],the effective mass for the top band along[110]crystallographic direction is lower under uniaxial compressive stress compared with other stresses and crystallographic directions configurations.In view of suppressing the scattering and reducing the effective mass,the[110]crystallographic direction is most favorable to be used as transport direction of the charge carrier to enhancement mobility when a uniaxial compressive stress along[110]direction is applied.The obtained results can provide a theory reference for the design and the selective of optimum stress and crystallorgraphic direction configuration of uniaxial strained silicon devices.
The valence band structure and hole effective mass of silicon under a uniaxial stress in (001) surface along the [110] direction were detailedly investigated in the framework of the k · p theory. The results showed that the splitting energy between the top band and the second band for uniaxial compressive stress is bigger than that of the tensile one at the same stress magnitude, and of all common used crystallographic directions, such as [110], [001], [110] and [100] for the top band along [110] crystallographic direction is lower under uniaxial compressive stress compared with other stresses and reducing the effective mass, the [110] crystallographic direction is most favorable to be used as transport direction of the charge carrier to enhancement mobility when a uniaxial compressive stress along [110] direction is applied. The obtained results can provide a theory reference for the design and t he selective of optimum stress and crystallorgraphic direction configuration of uniaxial strained silicon devices.