用具有 GaN 缓冲层的 GaN 薄膜制备出高功率 p—n 结蓝色发光二极管(LEDs)。外部量子效率高达0.18%,输出功率比常规的亮度为8mcd 的 SiC 蓝色 LEDs 高出10倍。在正向电流为20mA 的条件下,正向电压低至4V;这是报导过的 GaNLEDs 中最低的正向电压值。峰值波长和半最大值全宽度(FWHM)分别为430nm 和55nm。 High power p-n junction blue light emitting diodes (LEDs) were fabricated using a GaN film with a GaN buffer layer. External quantum efficiency of up to 0.18%, the output power than the conventional brightness of 8mcd SiC blue LEDs 10 times higher. The forward voltage is as low as 4V at a forward current of 20mA; this is the lowest forward voltage reported for GaNLEDs. Peak wavelength and full width at half maximum (FWHM) were 430 nm and 55 nm, respectively.