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研究了光辅助电化学刻蚀技术,并特别研究了阵列和硅衬底之间的边缘效应。在阵列边缘由于电流分布不均匀以及空穴从孔的侧壁注入,因此可以在边缘区域观察到结构的坍塌,采用一个周期性变化的信号来调制光照的强度,边缘效应会得到一定的抑制。同时,也观察到了硅的电化学深刻蚀工艺中大电流情况下的抛光现象(阳极氧化条件下,硅表面在氢氟酸溶液中快速均匀溶解不形成孔的现象)。光学测试表明,制作的正方格子结构具有光子晶体行为,其光学禁带位于6μm附近。
Optical assisted electrochemical etching techniques have been investigated and the edge effects between the array and the silicon substrate have been specifically investigated. At the edge of the array, due to the uneven current distribution and the injection of holes from the sidewalls of the holes, the collapse of the structure can be observed in the edge region. The edge effect can be restrained by using a periodically changing signal to modulate the intensity of illumination. At the same time, the phenomenon of polishing under high current in deep electrochemical etching of silicon was also observed (under the anodic oxidation condition, the surface of silicon was rapidly and uniformly dissolved in hydrofluoric acid solution without forming pores). Optical tests show that the fabricated square lattice structure has photonic crystal behavior with an optical band gap of about 6 μm.