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采用脉冲激光法在未处理和水浸泡的(111)SrTiO_3(STO)衬底上都生长得到了c轴取向的纤锌矿结构ZnO薄膜。ZnO薄膜与STO衬底之间的外延关系使用X射线进行研究。发现在未处理和水浸泡的(111)SrTiO_3衬底的面内排列分别是[1120]_(ZnO)//[110]_(STO)和[1100]_(ZnO)//[110]_(STO),它们之间相互旋转30o。ZnO薄膜相对于STO衬底的面内取向强烈依赖于衬底处理。可能是未处理和水浸泡STO衬底终止面的差别导致了外延关系的改变。相比来说,[1100]_(ZnO)//[110]_(STO)比[1120]_(ZnO)//[110]_(STO)能量更低,这是由于SrO_3比Ti终止STO衬底具有更高的成键密度和较低的界面能。
The c-axis oriented wurtzite ZnO films were grown on untreated and water-soaked (111) SrTiO_3 (STO) substrates by pulsed laser. The epitaxial relationship between the ZnO thin film and the STO substrate is studied using X-rays. The in-plane alignment of the (111) SrTiO_3 substrate found to be untreated and water-soaked was [1120] _ (ZnO) // [110] _ (STO) and [1100] _ (ZnO) // [110] _ (STO), rotate 30o between them. The in-plane orientation of the ZnO thin film relative to the STO substrate strongly depends on the substrate processing. It is likely that the difference in surface finish of STO substrates untreated and immersed in water resulted in a change in the epitaxial relationship. In contrast, [1100] _ (ZnO) // [110] _ (STO) has a lower energy than [1120] _ (ZnO) // [110] _ (STO) due to the fact that SrO_3 terminates STO The substrate has higher bond density and lower interface energy.