论文部分内容阅读
HBT由于采用了宽禁带发射区,充分利用了EB异质结能带的特点,使器件同时具有高的基区掺杂浓度和注入效率,并且,击穿电压高,势垒电容小,因而,适用于超高速数字电路.准弹道HBT在上述基础上又利用了电子在基区内的准弹道渡越性质,使器件的频率特性进一步改善,因而,特别适合于微波及毫米波应用.自对准工艺的实现,可充分降低外基区电阻与集电结电容,充分发挥了HBT的微波与高速性能.
Due to the wide bandgap emitting area, HBT makes full use of the characteristics of the EB heterojunction energy band so that the device has high base doping concentration and injection efficiency at the same time, and the breakdown voltage is high and the barrier capacitance is small, thus , Suitable for very high speed digital circuits.Based on the above, the quasi-ballistic HBT makes use of the quasi-ballistic crossing nature of electrons in the base area to further improve the frequency characteristics of the device and is therefore particularly suitable for microwave and millimeter wave applications. Alignment process to achieve, can fully reduce the outer base resistance and collector junction capacitance, give full play to the HBT microwave and high speed performance.