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High-temperature,high-power converters have gained importance in industrial applications given their ability to operate in adverse environments,such as in petroleum exploration,multi-electric aircrafts,and electric vehicles.SiC metal-oxide-semiconductor field-effect transistor (MOSFET),a new,wide bandgap,high-temperature device,is the key component of these converters.In this study,the static and dynamic characteristics of the SiC MOSFET,half-bridge module,are investigated at the junction temperature of 180 ℃.A simplified experimental method is then proposed pertaining to the power operation of the SiC module at 180 ℃.This method is based on the use of a thermal resistance test platform and is proven convenient for the study of heat dissipation characteristics.The high-temperature characteristics of the module are verified based on the conducted experiments.Accordingly,a 100 kW high-temperature converter is built,and the test results show that the SiC converter can operate at a junction temperature of 180 ℃ in a stable manner in compliance with the requirements of high-temperature,high-power applications.