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一、目的本计划旨在研究两种分别具有一定技术水平的固体器件。它们是应用在放大器内的具有单片集成匹配网络的双极微波功率晶体管。器件这样装配:将单个管芯直接附着在金属热沉上,从而免去了现有微波功率晶体管封装都要用的BeO隔离。研究的两种器件是2千兆赫20瓦和4千兆赫5瓦,它们都是以连续波模式工作的。将生产足够数量的器件,以证明其基本设计和封装技术能适应于生产需求。二、技术说明 1.引言本合同初期主要致力于以下两方面的工作:首先设计2千兆赫20瓦器件的有源部
I. Purpose The project aims to study two types of solid state devices with respective technological levels. They are bipolar microwave power transistors with integrated monolithic matching networks for use in amplifiers. The device is assembled by attaching a single die directly to the metal heat sink, eliminating the need for BeO isolation in existing microwave power transistor packages. The two devices studied are 2 GHz 20 W and 4 GHz 5 W, all of which work in CW mode. A sufficient number of devices will be produced to demonstrate that their basic design and packaging technologies are tailored to production needs. Second, the technical description 1. Introduction The initial contract mainly focused on the following two aspects: First, the design of 2 gigahertz 20-watt active components of the device