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为了设计低温下的红外探测器CMOS读出电路,实现高性能的红外成像探测技术,需对低温下的CMOS特性曲线进行研究,建立实用的物理仿真模型.本文介绍了CMOS低温建模需要设计的系列化管子,对管子的各种参数进行了测量,并对结果进行了具体分析,研究了CMOS低温77K下的特性曲线,建立了77K下的物理仿真实用模型,利用该模型设计红外探测器CMOS低温电路,通过测试,其仿真结果与低温77K的测试结果拟合度超过90%,验证了低温建模方法的可行性,该方法对特种专用集成电路的设计具有重要意义.
In order to design a low temperature infrared detector CMOS readout circuit and achieve high performance infrared imaging detection technology, it is necessary to study the CMOS characteristic curve at low temperature and establish a practical physical simulation model.This paper introduces the design of CMOS low temperature modeling Series of tubes were used to measure various parameters of the tubes and the results were analyzed in detail. The characteristic curves of CMOS at low temperature of 77K were studied, and a practical simulation model of 77K physical simulation was established. The infrared detector CMOS Low temperature circuit, through the test, the simulation results and the test results of low temperature 77K fit more than 90%, verify the feasibility of low temperature modeling method, the method of special ASIC design is of great significance.