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介绍了基于0.35μm工艺设计的单片CMOS图像传感器芯片.该芯片采用有源像素结构,像素单元填充因数可达到43%,高于通常APS结构像素单元30%的指标.此外还设计了一种数字动态双采样技术,相对于传统的双采样技术(固定模式噪声约为0.5%),数字动态双采样技术具有更简洁的电路结构和更好抑制FPN噪声的效果.传感器芯片通过MPW计划采用Chartered0.35μm数模混合工艺实现.实验结果表明芯片工作良好,图像固定模式噪声约为0.17%.
This paper introduces a single chip CMOS image sensor chip based on 0.35μm process design.The active pixel structure of the chip is adopted, the pixel unit fill factor can reach 43%, which is higher than the index of 30% of the usual APS structure pixel unit.In addition, Digital dynamic double-sampling technology, compared with the traditional double sampling technology (fixed mode noise is about 0.5%), digital dynamic double sampling technology has a more compact circuit structure and better inhibit the effect of FPN noise sensor chip through the MPW program using Chartered0 .35μm digital-to-analog hybrid technology. The experimental results show that the chip works well and the image fixed mode noise is about 0.17%.