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用分子束外延在 Ga As衬底上生长了 Zn Cd Se/Zn Se多量子阱结构 .利用 X射线衍射 ( XRD)、变温度 PL光谱和 ps发光衰减等研究了 Zn Cd Se/Zn Se多量子阱结构和激子复合特性 .由变温 PL光谱讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理 .
Zn Cd Se / Zn Se multi-quantum well structure was grown on Ga As substrate by molecular beam epitaxy. The properties of Zn Cd Se / Zn Se quantum well were studied by X-ray diffraction (XRD), variable temperature PL spectroscopy and ps emission decay, Well structure and exciton recombination characteristics are discussed.The mechanism of widening radiation width and decreasing radiation recombination efficiency with increasing temperature is discussed by temperature-variable PL spectroscopy.