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采用金属有机物化学气相沉积(MOCVD)技术生长了具有高In组分InGaN阱层的InGaN/GaN多量子阱(MQW)结构,高分辨X射线衍射(HRXRD)ω-2θ扫描拟合得到阱层In含量28%。比较大的表面粗糙度表明有很大的位错密度。室温下光致荧光(PL)研究发现该量子阱发射可见的红橙光,峰位波长在610 nm附近。变温PL(15～300 K)进一步揭示量子阱在低温下有两个发光机制,对应的发射峰波长分别为538 nm和610 nm。由于In分凝和载流子的局域化导致的载流子动力改变,使得量子阱PL发光峰值随温度增加呈明显的“S”变化趋势。
The structure of InGaN / GaN multiple quantum well (MQW) with In-InGaN well layers was grown by metal organic chemical vapor deposition (MOCVD) technique. High-resolution X-ray diffraction (HRXRD) Content of 28%. Larger surface roughness indicates a large dislocation density. Photoluminescence (PL) studies at room temperature revealed that the quantum well emitted visible red-orange light with a peak wavelength around 610 nm. Variable temperature PL (15-300 K) further reveals that the quantum well has two luminescence mechanisms at low temperatures, with corresponding emission peak wavelengths of 538 nm and 610 nm, respectively. Due to the change of carrier motions due to In partial condensation and carrier localization, the PL peak of quantum well shows a significant “S” trend with increasing temperature.