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文章依据较高线电压的扩展比较了具有扩展安全工作区(SOA)的2个4.5kV二极管。为了改善反向恢复特性,必须降低通态过程中靠近阳极的过剩载流子浓度。为了控制阳极的注入效率,比较了工艺技术的2种状态,即发射掺杂降低和在p掺杂区离子辐照.根据正向低电流密度(如2A/cm2)恢复时50%的低开关损耗,表明局部寿命控制技术比发射掺杂降低技术更具优势。因此,通态特性一致的器件选择了这种改善。此外,观察到了离子辐照二极管的软开关性能。由校准的计算机仿真提供了用实验方法得到的这种性能的解释。
The article compares two 4.5-kV diodes with Extended Safe Operating Area (SOA) based on the higher line voltage expansion. In order to improve the reverse recovery characteristics, it is necessary to reduce the excess carrier concentration near the anode during the on-state. In order to control the injection efficiency of the anode, two states of the process technology were compared, namely the emission doping was reduced and the ion irradiation in the p-doping region was made.A 50% low switch upon recovery from a positive low current density (eg, 2A / cm2) Loss, indicating that the local life control technology is more advantageous than the emission doping reduction technology. Therefore, devices with consistent on-state characteristics have chosen this improvement. In addition, the soft switching performance of ionizing radiation diodes was observed. A computer simulation of calibration provides an experimental explanation of this performance.