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4.80年代初期,距1930年大约50年,国外研制成功了使用具有负电子亲和势的、Ⅲ-Ⅴ族元素化合物光电阴极(简称NEA阴极)的像增强器。即所谓“第三代的微光像增强器”。典型的NEA光电阴极,是利用P型重掺杂的Ⅲ-Ⅴ族元素化合物的单晶薄层,以Cs和O_2作表面激活制成的。1965年,J.J.Scheer和Van
In the early 1980s, from about 50 years in 1930, an image intensifier using a group III-V compound photocathode (NEA cathode) with negative electron affinity was successfully developed abroad. The so-called “third-generation light image intensifier.” A typical NEA photocathode is made using a single-crystal thin layer of P-type heavily-doped Group III-V elemental compound and surface activated with Cs and O 2. In 1965, J.J.Scheer and Van