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研究了磁控溅射制备的Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜的光谱及短波长静态记录性能。研究结果表明，晶态薄膜反射率较高，并在６００～９００ｎｍ波长范围内，晶态与非晶态的反射率和折射率相差很大。在ＣＤ－Ｅ系统的工作波长７８０ｎｍ处，晶态反射率高达５０％，光学常数为５．３４－１．０ｉ；非晶态反射率为２３％，光学常数为２．５－１．０３ｉ。从这一角度讲，Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜适于做ＣＤ－Ｅ系统的记录介质。另外，采用波长为５１４．４ｎｍ的短波长光学静态记录测试仪对Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３薄膜的记录性能进行了测试，结果表明，这种薄膜短波长记录性能较好，它在较低功率和短脉宽的激光束作用下就可得到较高的反射率对比度。
The spectra and short-wavelength static recording properties of Ag5In5Te47Sb33 phase-change film prepared by magnetron sputtering were studied. The results show that the reflectivity of the crystalline thin film is high, and the reflectivity and the refractive index of the crystalline and amorphous phases vary greatly in the wavelength range of 600-900 nm. In the CD-E system operating wavelength of 780nm, the crystalline reflectivity of up to 50%, the optical constant of 5.34-1.0i; amorphous reflectivity of 23%, the optical constant of 2.5-1.03i. From this perspective, Ag5In5Te47Sb33 phase-change film is suitable for CD-E system recording media. In addition, the recording performance of the Ag5In5Te47Sb33 thin film was tested by using a short wavelength optical static recording tester with a wavelength of 514.4nm. The results show that the recording performance of the film is good at short wavelength, Beam effect can be higher reflectivity contrast.