本文以理论分析为依据,对垂直导电型功率器件,即 VDMOS 晶体管的结构进行优化设计。特别对高压器件的元胞形状、尺寸、导通电阻、终端保护结构、工艺参数等进行了合理设计,并在工艺上验证了400~V-2~A 及600~V-5~A 两种器件的设计。对工艺流程中出现的问题亦进行了相应的分析解决,获得合格的样品及一套完整的 VDMOS晶体管的设计方法 Based on the theoretical analysis, this paper optimizes the structure of vertical conductive power devices, ie, VDMOS transistors. In particular, the cell shape, size, on-resistance, terminal protection structure and process parameters of high-voltage device are reasonably designed and technically verified to be between 400V-2A and 600V-5A Device design. The problems in the process flow have also been analyzed and resolved accordingly, to obtain qualified samples and a complete set of VDMOS transistor design method