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利用热解化学汽相沉积技术在硅基底的边缘生长出优异的金刚石晶体和薄膜。研究表明：金刚石晶粒在基底边缘的成核密度和生长率比基底表面的大得多，品质更好。但金刚石晶粒的边棱与基底边棱不一致。边核上的金刚石薄膜，虽然与基底表面的薄膜一样粗糙不平，由于薄膜的边棱变得平缓，二次成核的密度及其生长速率却更小。因此边缘上的薄膜更薄。
The use of pyrolytic chemical vapor deposition technology in the edge of the silicon substrate to grow excellent diamond crystals and films. The results show that the nucleation and growth rate of diamond grains in the edge of the substrate are much larger than that of the substrate surface, and the quality is better. However, the edges of the diamond grains do not coincide with the edges of the substrate. The diamond film on the nucleus of the nucleus, although as rough as the film on the surface of the substrate, has a lesser density and growth rate due to the flatter edges of the film. The thin film on the edge is therefore thinner.