Sputtering yields and kinetic energy distributions (KED) of Al atomic ions ejected from a pure aluminium sampleunder MeV silicon ion bombardment were simulated with the molecular dynamic method. Since the electronic energyloss Se is much higher than the nuclear energy loss Sn when the incident ion energy is as high as several MeV, the Seeffect was also taken into consideration in the simulation. It was found that the simulated sputtering yield fits well withthe experimental data and the electronic energy loss has a slight effect at incident ion energies higher than 4 MeV. Thesimulated secondary ion KED spectrum is a little lower in the peak energy and narrower in the peak width than thatin the experiment.