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美国陆军正在投资一项氮化镓(GaN-galliumnitride)功率放大器制造计划,以演示验证其在通信、电子战和雷达应用中节省成本和降低循环时间的潜力。BAE系统电子和集成工程公司在一项价值为800万美元的合同下将生产160W的固态GaN放大器,该款项中包括DARPA为电击穿生成技术(DMT)计划
The U.S. Army is investing in a GaN-galliumnitride power amplifier manufacturing program to demonstrate its potential to prove its cost savings and cycle times in communications, e-war and radar applications. BAE Systems Electronics and Integrated Engineering will produce 160W of solid-state GaN amplifiers under a $ 8 million contract that includes DARPA’s Electro-Dielectric Breakdown (DMT) Program